2024 Nanotechnology Conference and iMAPS HiTEN
Prof. Christou was a keynote speaker at the Nanotechnology and iMAPS events, where he presented his research on the heterogeneous integration of superconductors with wide bandgap semiconductors and diamond electronics.
At the Nanotechnology conference, held from June 29 to July 6, 2024, in Greece, Prof. Christou delved into the challenges and breakthroughs in epitaxial growth of both GaN and NbN on SiC substrates.
Abstract:
“The current state of Gallium Nitride (GaN) bulk crystal growth technology and GaN epitaxy lags behind the state of many of the compound semiconductor technologies, especially in meeting the photonic device requirements and power electronics requirements. This presentation reports the results of the UMD investigations on the characterization of defects in Niobium nitride (NbN) superconducting epitaxial layers, doped and undoped, leading to an understanding of the parameters that influence defect propagation from the substrate into the epilayer, as well as the results of our investigation of the electrical activity of defects in thin 10-100 nm NbN layers. Epitaxial GaN and related nitride epitaxy are required for achieving high-speed power switching beyond 2 kV as well as for photonic sensing. We have applied advanced defect spectroscopic techniques to NbN/GaN epi materials and test structures. Finally, the growth model for NbN on GaN is proposed based on the empirical observations.”
At the iMAPS conference, held from July 15 to 17, 2024, in Scotland, United Kingdom, Prof. Christou discussed the potential of wide bandgap materials, especially diamond, to revolutionize power electronics.
Excerpt from the Abstract:
“Wide bandgap (WBG) materials such as silicon carbide, gallium nitride, and diamond offer the potential to overcome the limitations of silicon. Among these WBG materials, diamond demonstrates extreme hardness, chemical inertness, high thermal conductivity, high hole and electron mobility, high dielectric strength and high breakdown strength, and has the widest band gap. These properties are ideal for high power amplifiers and switches. The recent availability of extremely pure single crystal diamond created by High Pressure High Temperature (HPHT) or chemical vapor deposition (CVD) techniques has made it possible to contemplate the realization of diamond semiconductor devices.”
For more information on research or any other queries, please contact Prof. Aristos Christou.
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